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IRF742 |
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| Part Number | IRF742 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltag... |
| Features |
eprint.cn
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF742
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 VSD Diode Forward Voltage IF= 10A; VGS= 0 MIN MAX UNIT 350 V 24V 0.8 Ω ±500 nA 250 uA 2.0 V isc website：www.iscsemi.cn 2 isc & iscsemi is regis... |
| Document |
 IRF742 Data Sheet
PDF 59.40KB |
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