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IRF3205S |
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| Part Number | IRF3205S |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use. |
| Features | available for low-profile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mounted, . |
| Datasheet |
 IRF3205S Data Sheet
PDF 280.90KB |
| Distributor | Stock | Price | Buy |
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IRF3205S |
| Part Number | IRF3205S |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T. |
| Features | RAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=62A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=55V; VGS= 0 VSD Diode Forward On-Voltage IS=62A ;VGS= 0 MIN TYPE MAX UNIT 55 V 2.0 4.0 V 8 mΩ ±100 nA 25 µ. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
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| 2 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | IRF3205 |
International Rectifier |
Power MOSFET |
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| 4 | IRF3205 |
nELL |
N-Channel Power MOSFET |
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| 5 | IRF3205A |
nELL |
N-Channel Power MOSFET |
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| 6 | IRF3205H |
nELL |
N-Channel Power MOSFET |
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| 7 | IRF3205L |
International Rectifier |
N-Channel Power MOSFET |
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| 8 | IRF3205LPBF |
International Rectifier |
Power MOSFET |
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| 9 | IRF3205PBF |
International Rectifier |
HEXFET Power MOSFET |
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| 10 | IRF3205SPBF |
International Rectifier |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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