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IRF3205S |
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| Part Number | IRF3205S |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Desi... |
| Features |
RAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=62A VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=55V; VGS= 0
VSD
Diode Forward On-Voltage
IS=62A ;VGS= 0
MIN TYPE MAX UNIT
55
V
2.0
4.0
V
8
mΩ
±100 nA
25
µA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the a... |
| Document |
 IRF3205S Data Sheet
PDF 201.64KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 2 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3205 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3205 |
nELL |
N-Channel Power MOSFET |
|
| 5 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|
| 6 | IRF3205H |
nELL |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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