Distributor | Stock | Price | Buy |
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IRF243 |
Part Number | IRF243 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Drain Current ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET. |
Features | AL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0 VSD Diode Forward Voltage IS=16A; VGS=0 Ciss Input Capacitance Crss. |
IRF243 |
Part Number | IRF243 |
Manufacturer | Fairchild Semiconductor |
Title | N-Channel Power MOSFET |
Description | . |
Features | . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF240 |
Samsung semiconductor |
N-Channel Power MOSFET | |
2 | IRF240 |
Seme LAB |
N-Channel Power MOSFET | |
3 | IRF240 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF240 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
5 | IRF240 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | IRF240 |
TT |
N-CHANNEL POWER MOSFET | |
7 | IRF240 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED | |
8 | IRF240SMD |
Seme LAB |
N-Channel Power MOSFET | |
9 | IRF241 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
10 | IRF241 |
Samsung semiconductor |
N-Channel Power MOSFET |