Part Number | IRF1407LPbF |
Distributor | Stock | Price | Buy |
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Part Number | IRF1407LPbF |
Manufacturer | International Rectifier |
Title | Power MOSFETs |
Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des. |
Features | application. The through-hole version (IRF1407L) is available for low- profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF1407L |
International Rectifier |
Power MOSFET | |
2 | IRF1407L |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1407L |
Infineon |
Power MOSFET | |
4 | IRF1407 |
International Rectifier |
Power MOSFET | |
5 | IRF1407 |
INCHANGE |
N-Channel MOSFET | |
6 | IRF1407PbF |
International Rectifier |
Power MOSFET | |
7 | IRF1407S |
International Rectifier |
Power MOSFET | |
8 | IRF1407S |
INCHANGE |
N-Channel MOSFET | |
9 | IRF1407S |
Infineon |
Power MOSFET | |
10 | IRF1407SPbF |
Infineon |
Power MOSFET |