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IRF1407LPbF |
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| Part Number | IRF1407LPbF |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
application.
The through-hole version (IRF1407L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 s... |
| Document |
 IRF1407LPbF Data Sheet
PDF 246.29KB |
Similar Datasheet
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