Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF132 |
| Part Number | IRF132 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF132 |
| Part Number | IRF132 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.25Ω(Max) ·High Power,High Speed Applications APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR. |
| Features | IONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=12A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF130 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 2 | IRF130 |
Seme LAB |
N-Channel Power MOSFET |
|
| 3 | IRF130 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 4 | IRF130 |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRF130 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF130 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | IRF1302 |
International Rectifier |
Power MOSFET |
|
| 8 | IRF1302L |
International Rectifier |
Power MOSFET |
|
| 9 | IRF1302S |
International Rectifier |
Power MOSFET |
|
| 10 | IRF130SMD |
Seme LAB |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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