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| Distributor | Stock | Price | Buy |
|---|
IRF121 |
| Part Number | IRF121 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF121 |
| Part Number | IRF121 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 8.0A and 9.2A, 80V and 100V • rDS(ON) = 0.27Ω and 0.36Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123 PACKAGE TO-204AA TO-204AA TO-204AA TO-. |
IRF121 |
| Part Number | IRF121 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM. |
| Features |
osfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS=0 VSD Diode Forward Voltage IS=8A; VGS=0 Cis. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF120 |
Samsung semiconductor |
N-CHANNEL POWER MOSFET |
|
| 2 | IRF120 |
Intersil Corporation |
Power MOSFET |
|
| 3 | IRF120 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF120 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF1205 |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF122 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF122 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 8 | IRF122 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 9 | IRF122 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF123 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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