Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | IRF120 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRF120 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRF120 |
| Manufacturer | Samsung semiconductor |
| Title | N-CHANNEL POWER MOSFET |
| Description | . |
| Features | . |
| Part Number | IRF120 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMU. |
| Features |
nel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=8A; VGS=. |
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| 1 | IRF1205 |
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| 2 | IRF121 |
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| 7 | IRF122 |
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| 8 | IRF122 |
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| 9 | IRF122 |
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| 10 | IRF123 |
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Desde 2024. D4U Semiconductor.
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