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| Part Number | IPP35CN10N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IPP35CN10N |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-fr. |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC6. |
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Desde 2024. D4U Semiconductor.
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