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IPP35CN10N |
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| Part Number | IPP35CN10N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP35CN10N，IIPP35CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche te... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.035Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 27 IDM Drain Current-Single Pulsed 108 PD Total Dissipation @TC=25℃ 58 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 IPP35CN10N Data Sheet
PDF 241.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP35CN10N |
Infineon |
Power-Transistor |
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| 2 | IPP35CN10NG |
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| 3 | IPP320N20N3 |
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| 4 | IPP320N20N3 |
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| 5 | IPP320N20N3G |
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| 6 | IPP011N03LF2S |
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Desde 2024. D4U Semiconductor.
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