Part Number | IPI05CN10N |
Distributor | Stock | Price | Buy |
---|
Part Number | IPI05CN10N |
Manufacturer | Infineon |
Title | Power-Transistor |
Description | IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead . |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB05CN10N G IPI05CN. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPI05CN10NG |
Infineon |
Power-Transistor | |
2 | IPI05CNE8N |
Infineon |
Power-Transistor | |
3 | IPI05CNE8NG |
Infineon |
Power-Transistor | |
4 | IPI051N15N5 |
Infineon |
MOSFET | |
5 | IPI051N15N5 |
INCHANGE |
N-Channel MOSFET | |
6 | IPI051NE8NG |
Infineon Technologies |
Power-Transistor | |
7 | IPI052NE7N3 |
Infineon |
Power-Transistor | |
8 | IPI052NE7N3G |
Infineon Technologies |
Power-Transistor | |
9 | IPI057N08N3 |
Infineon |
Power-Transistor | |
10 | IPI057N08N3G |
Infineon |
Power-Transistor |