IPI05CN10N |
Part Number | IPI05CN10N |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summar... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB05CN10N G IPI05CN10N G IPP05CN10N G Package Marking PG-TO263-3 05CN10N PG-TO262-3 05CN10N PG-TO220-3 05CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous dr... |
Document |
IPI05CN10N Data Sheet
PDF 510.71KB |
Similar Datasheet
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1 | IPI05CN10N |
INCHANGE |
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2 | IPI05CN10NG |
Infineon |
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