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IPD60R170CFD7 |
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| Part Number | IPD60R170CFD7 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | . . . . . 1 Maximum ratings 3 Thermal characteristics . |
| Features |
•Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on) *QgandRDS(on) *Eoss •Best-in-classRDS(on)inSMDandTHDpackages Benefits •Excellenthardcommutationruggedness •Highestreliabilityforresonanttopologies •Highestefficiencywithoutstandingease-of-use/performancetradeoff •Enablingincreasedpowerdensitysolutions Potentialapplications SuiteableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications –Server, Telecom,EVCha. |
| Datasheet |
 IPD60R170CFD7 Data Sheet
PDF 1.00MB |
| Distributor | Stock | Price | Buy |
|---|
IPD60R170CFD7 |
| Part Number | IPD60R170CFD7 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt an. |
| Features |
·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuo. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R180C7 |
Infineon |
MOSFET |
|
| 2 | IPD60R180C7 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD60R180CM8 |
Infineon |
MOSFET |
|
| 4 | IPD60R180P7S |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD60R180P7S |
Infineon |
MOSFET |
|
| 6 | IPD60R1K0CE |
Infineon Technologies |
MOSFET |
|
| 7 | IPD60R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD60R1K4C6 |
Infineon Technologies |
Power Transistor |
|
| 9 | IPD60R1K4C6 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPD60R1K5CE |
Infineon Technologies |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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