IPD60R170CFD7 |
Part Number | IPD60R170CFD7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for r... |
Features |
·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 14 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 76 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTE... |
Document |
IPD60R170CFD7 Data Sheet
PDF 237.35KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPD60R170CFD7 |
Infineon |
MOSFET | |
2 | IPD60R180C7 |
Infineon |
MOSFET | |
3 | IPD60R180C7 |
INCHANGE |
N-Channel MOSFET | |
4 | IPD60R180CM8 |
Infineon |
MOSFET | |
5 | IPD60R180P7S |
INCHANGE |
N-Channel MOSFET | |
6 | IPD60R180P7S |
Infineon |
MOSFET |