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| Part Number | IPD053N08N3 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IPD053N08N3 |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.3 mW 90 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified acc. |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.3 mW 90 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application previous engineering sample code: IPD06CN08N • Ideal for high-frequency switching and synchronous rectificat. |
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|---|---|---|---|---|
| 1 | IPD053N08N3G |
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|
| 2 | IPD053N06N |
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| 3 | IPD053N06N |
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|
| 4 | IPD053N06N3G |
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| 5 | IPD050N03L |
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| 6 | IPD050N03L |
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| 7 | IPD050N03LG |
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| 8 | IPD050N10N5 |
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| 9 | IPD050N10N5 |
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| 10 | IPD052N10NF2S |
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Desde 2024. D4U Semiconductor.
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