Busque con el número de pieza junto con el fabricante o la descripción
IPD053N08N3 |
Click to view a larger image
| Part Number | IPD053N08N3 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Features |
·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt... |
| Document |
 IPD053N08N3 Data Sheet
PDF 238.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD053N08N3 |
Infineon |
Power-Transistor |
|
| 2 | IPD053N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPD053N06N |
Infineon |
Power-Transistor |
|
| 4 | IPD053N06N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD053N06N3G |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 6 | IPD050N03L |
Infineon Technologies |
MOSFET |
|
Desde 2024. D4U Semiconductor.
|