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HM53

ETC
HM53
Part Number HM53
Manufacturer ETC
Title High Power Low Cost Inductors
Description MODEL HM53 SERIES High Power Low Cost Inductors NEW PRODUCT FEATURES AND BENEFITS • High current capability • Single layer, cost effective desi...
Features AND BENEFITS
• High current capability
• Single layer, cost effective design
• Available in two styles - horizontal and vertical APPLICATIONS



• Switching power supplies Motor control circuits Differential EMI filters Inductor for general purpose use and ripple filters ELECTRICAL / ENVIRONMEN...

Datasheet HM53 pdf datasheet - 64.88KB



HM5P55R

H&M Semiconductor
HM5P55R
Part Number HM5P55R
Manufacturer H&M Semiconductor
Title P-Channel Enhancement Mode Power MOSFET
Description The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl.
Features
● VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● DC-DC Converter HM5P5.

Datasheet HM5P55R pdf datasheet




HM5N60K

H&M Semiconductor
HM5N60K
Part Number HM5N60K
Manufacturer H&M Semiconductor
Title 600V N-Channel MOSFET
Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to min.
Features
• 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability {D
● TO-252 TO-251 ◀▲ {G

● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Vo.

Datasheet HM5N60K pdf datasheet




HM5N60I

H&M Semiconductor
HM5N60I
Part Number HM5N60I
Manufacturer H&M Semiconductor
Title 600V N-Channel MOSFET
Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to min.
Features
• 4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability {D
● TO-252 TO-251 ◀▲ {G

● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Vo.

Datasheet HM5N60I pdf datasheet




HM5N60F

H&M Semiconductor
HM5N60F
Part Number HM5N60F
Manufacturer H&M Semiconductor
Title N-CHANNEL MOSFET
Description N R N-CHANNEL MOSFET HM5N60 MAIN CHARACTERISTICS Package ID .0 A VDSS 600 V Rdson(@Vgs=10V) 2.4Ω Qg 13.3nC z z z UPS APPLICATIONS z Hi.
Features zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking Package HMN60I HMN60I IPAK HM N60K HMN60K DPAK HMN60 HMN60 TO-220C HM N60F HMN60F TO-220MF Halogen Free NO NO NO NO Packaging .

Datasheet HM5N60F pdf datasheet




HM5N60

H&M Semiconductor
HM5N60
Part Number HM5N60
Manufacturer H&M Semiconductor
Title N-CHANNEL MOSFET
Description N R N-CHANNEL MOSFET HM5N60 MAIN CHARACTERISTICS Package ID .0 A VDSS 600 V Rdson(@Vgs=10V) 2.4Ω Qg 13.3nC z z z UPS APPLICATIONS z Hi.
Features zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking Package HMN60I HMN60I IPAK HM N60K HMN60K DPAK HMN60 HMN60 TO-220C HM N60F HMN60F TO-220MF Halogen Free NO NO NO NO Packaging .

Datasheet HM5N60 pdf datasheet





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