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HGTG18N120BN N-Channel IGBT


HGTG18N120BN
Part Number HGTG18N120BN
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Intersil Corporation
HGTG18N120BN
Part Number HGTG18N120BN
Manufacturer Intersil Corporation
Title N-Channel IGBT
Description HGTG18N120BN Data Sheet January 2000 File Number 4518.3 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This.
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly .
ON Semiconductor
HGTG18N120BN
Part Number HGTG18N120BN
Manufacturer ON Semiconductor
Title NPN IGBT
Description HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 11.
Features
• 26 A, 1200 V, TC = 110°C
• Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
• Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev. 3 $Y &Z &3 &K G18N120B.

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