Part Number | HGTG18N120BN |
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Part Number | HGTG18N120BN |
Manufacturer | Intersil Corporation |
Title | N-Channel IGBT |
Description | HGTG18N120BN Data Sheet January 2000 File Number 4518.3 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This. |
Features | of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly . |
Part Number | HGTG18N120BN |
Manufacturer | ON Semiconductor |
Title | NPN IGBT |
Description | HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. Features • 26 A, 1200 V, TC = 11. |
Features |
• 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev. 3 $Y &Z &3 &K G18N120B. |
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1 | HGTG18N120BND |
Fairchild Semiconductor |
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2 | HGTG18N120BND |
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3 | HGTG18N120BND |
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7 | HGTG10N120BND |
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