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HGTG18N120BN |
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| Part Number | HGTG18N120BN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | HGTG18N120BN is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essenti... |
| Features |
• 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G18N120BN © Semiconductor Components Industries, LLC, 2001 February, 2020 − Rev. 3 $Y &Z &3 &K G18N120BN = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet... |
| Document |
 HGTG18N120BN Data Sheet
PDF 406.46KB |
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Desde 2024. D4U Semiconductor.
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