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| Part Number | HGTG12N60C3D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTG12N60C3D |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel IGBT |
| Description | Data Sheet HGTG12N60C3D December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo. |
| Features | of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage . |
| Part Number | HGTG12N60C3D |
| Manufacturer | Harris Corporation |
| Title | UFS Series N-Channel IGBT |
| Description | The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately . |
| Features |
• • • • • 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss . |
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| 1 | HGTG12N60A4 |
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| 2 | HGTG12N60A4 |
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| 3 | HGTG12N60A4D |
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| 4 | HGTG12N60A4D |
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| 5 | HGTG12N60A4D |
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| 6 | HGTG12N60B3 |
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| 7 | HGTG12N60B3D |
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| 8 | HGTG12N60B3D |
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| 9 | HGTG12N60D1 |
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| 10 | HGTG12N60D1D |
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Desde 2024. D4U Semiconductor.
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