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HGTG12N60A4D N-Channel IGBT


HGTG12N60A4D
Part Number HGTG12N60A4D
Distributor Stock Price Buy
Fairchild Semiconductor
HGTG12N60A4D
Part Number HGTG12N60A4D
Manufacturer Fairchild Semiconductor
Title N-Channel IGBT
Description HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. Thes.
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switchin.
ON Semiconductor
HGTG12N60A4D
Part Number HGTG12N60A4D
Manufacturer ON Semiconductor
Title N-Channel IGBT
Description SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high in.
Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti−parallel is the development type TA49371. This IGBT is ideal for many high voltage switching.

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