Part Number | HGT1S3N60C3DS |
Distributor | Stock | Price | Buy |
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Part Number | HGT1S3N60C3DS |
Manufacturer | Fairchild Semiconductor |
Title | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Description | The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state . |
Features |
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high . |
Part Number | HGT1S3N60C3DS |
Manufacturer | Harris Corporation |
Title | UFS Series N-Channel IGBT |
Description | The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state . |
Features |
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high . |
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1 | HGT1S3N60C3D |
Fairchild Semiconductor |
6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
2 | HGT1S3N60C3D |
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3 | HGT1S3N60A4DS |
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