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HGT1S3N60C3DS |
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| Part Number | HGT1S3N60C3DS |
| Manufacturer | Intersil Corporation |
| Description | HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.2 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high vol... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49119.
Features
• 6A, 600V at TC = 25oC • 600V Switching SOA Capa... |
| Document |
 HGT1S3N60C3DS Data Sheet
PDF 273.87KB |
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Desde 2024. D4U Semiconductor.
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