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| Part Number | H11G2 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | H11G2 |
| Manufacturer | Fairchild Semiconductor |
| Title | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| Description | The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. H11G1 H11. |
| Features |
• High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 • High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA • Low leakage current at elevated temperature (maximum 100 µA at 80°C) • Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS • • • • • CMOS logic interface Telephone ring detector Low input TTL interface Power supply is. |
| Part Number | H11G2 |
| Manufacturer | Motorola Inc |
| Title | 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detec. |
| Features |
= 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector –Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts mA Amps mW mW/°C 3 2 Symbol Value Unit 1 H11G2* [CTR = 1000% Min. |
| Part Number | H11G2 |
| Manufacturer | ISOCOM COMPONENTS |
| Title | HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
| Description | 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pi. |
| Features | Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF l Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 10. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H11G1 |
Motorola Inc |
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
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| 2 | H11G1 |
QT Optoelectronics |
HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS |
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| 3 | H11G1 |
Fairchild Semiconductor |
HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
|
| 4 | H11G1 |
ISOCOM COMPONENTS |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
|
| 5 | H11G1X |
ISOCOM COMPONENTS |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
|
| 6 | H11G2X |
ISOCOM COMPONENTS |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
|
| 7 | H11G3 |
Fairchild Semiconductor |
HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
|
| 8 | H11G3 |
Motorola Inc |
6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors) |
|
| 9 | H11G3 |
ISOCOM COMPONENTS |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
|
| 10 | H11G3X |
ISOCOM COMPONENTS |
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
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Desde 2024. D4U Semiconductor.
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