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H11G2 |
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| Part Number | H11G2 |
| Manufacturer | ISOCOM COMPONENTS |
| Description | 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor ... |
| Features |
Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF
l
Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Peak Forward Current (1µs pulse, 300pps) Reverse Voltage Power Dissipation OUTPUT TRANSISTOR ... |
| Document |
 H11G2 Data Sheet
PDF 81.03KB |
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Desde 2024. D4U Semiconductor.
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