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GTRA360502M |
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| Part Number | GTRA360502M |
| Manufacturer | Wolfspeed |
| Description | The GTRA360502M houses two GaN-on-SiC power transistor for use in asymmetric Doherty power amplifiers. The device has been designed t for use in communications infrastructure applications from 3,400 MHz to c 3,800 MHz. It operates from a supply voltage of up to 50 volts and delivers a maximum, average output power of 8 watts. GTRA360502M Package PG-DFN-6.5x. |
| Features |
• GaN on SiC HEMT technology • Asymmetrical Doherty design - Main: P3dB = 20 W Typ - Peak: P3dB = 36 W Typ • Typical pulsed CW performance, 3600 MHz, 48 V, 10 μs bandwidth, 10% duty cycle (Doherty configuration) - Output power at P3dB = 50 W - Drain efficiency = 62% @ 50 W • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001) • Pb-free and RoHS compliant • Low thermal resistance isc RF Characteristics d Typical RF Characteristics (tested in Wolfspeed application circuit) VDD = 48 V, IDQ = 25 mA, VGS(PEAK) = –4.9 V, channel bandwidth = 3.84 MHz, 10 dB peak/average @ 0.01% CCDF Freq Pout . |
| Datasheet |
 GTRA360502M Data Sheet
PDF 767.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GTRA362002FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 2 | GTRA364002FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 3 | GTRA374902FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 4 | GTRA184602FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 5 | GTRA262802FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 6 | GTRA263902FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 7 | GTRA412852FC |
Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 8 | GTR210 |
ADOS |
Gastransmitter |
|
| 9 | GTRB204402FC |
MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
| 10 | GTRB206002FC |
MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
|
Desde 2024. D4U Semiconductor.
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