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| Part Number | FQD3P50 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FQD3P50 |
| Manufacturer | ON Semiconductor |
| Title | P-Channel MOSFET |
| Description | This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strengt. |
| Features |
• −2.1 A, −500 V, RDS(on) = 4.9 W (Max.) @ VGS = −10 V, ID = −1.05 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 20°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage −500 V ID Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C). |
similar datasheet
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| 1 | FQD3P50TM-F085 |
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| 2 | FQD3P50TM_F085 |
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| 3 | FQD3P20 |
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| 4 | FQD30N06 |
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| 5 | FQD30N06L |
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| 6 | FQD3N25 |
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| 7 | FQD3N30 |
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| 8 | FQD3N40 |
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| 9 | FQD3N50C |
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| 10 | FQD3N60 |
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|
Desde 2024. D4U Semiconductor.
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