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FQD3P50 |
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| Part Number | FQD3P50 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
| Features |
• −2.1 A, −500 V, RDS(on) = 4.9 W (Max.) @ VGS = −10 V, ID = −1.05 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 20°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage −500 V ID Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) A −2.1 −1.33 IDM VGSS Drain Current − Pulsed (Note 1) Gate−Source Voltage −8.4 A ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ IAR Avalanche Current (Note 1) −2.1 A EAR Repe... |
| Document |
 FQD3P50 Data Sheet
PDF 390.12KB |
Similar Datasheet
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| 2 | FQD3P50TM-F085 |
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Desde 2024. D4U Semiconductor.
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