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| Distributor | Stock | Price | Buy |
|---|
FDV304P |
| Part Number | FDV304P |
| Manufacturer | ON Semiconductor |
| Title | P-Channel Digital FET |
| Description | This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery . |
| Features |
• −25 V, −0.46 A Continuous, −1.5 A Peak ♦ RDS(on) = 1.1 W @ VGS = −4.5 V ♦ RDS(on) = 1.5 W @ VGS = −2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model • Compact Industry Standard SOT−23 Surface Mount Package • This Device is Pb−Free and Halide Free ABSOLUTE MAXIMUM RATINGS (TA =. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDV304P-F169 |
ON Semiconductor |
P-Channel Digital FET |
|
| 2 | FDV301N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 3 | FDV301N |
ON Semiconductor |
N-Channel Digital FET |
|
| 4 | FDV301N |
Kexin |
N-Channel MOSFET |
|
| 5 | FDV301N-F169 |
ON Semiconductor |
N-Channel Digital FET |
|
| 6 | FDV302P |
ON Semiconductor |
P-Channel Digital FET |
|
| 7 | FDV302P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|
| 8 | FDV303N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 9 | FDV303N |
ON Semiconductor |
N-Channel Digital FET |
|
| 10 | FDV303N |
Kexin |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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