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FDV302P |
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| Part Number | FDV302P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias res. |
| Features | -25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 Mark:302 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC . |
| Datasheet |
 FDV302P Data Sheet
PDF 63.55KB |
| Distributor | Stock | Price | Buy |
|---|
FDV302P |
| Part Number | FDV302P |
| Manufacturer | ON Semiconductor |
| Title | P-Channel Digital FET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDV301N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 2 | FDV301N |
ON Semiconductor |
N-Channel Digital FET |
|
| 3 | FDV301N |
Kexin |
N-Channel MOSFET |
|
| 4 | FDV301N-F169 |
ON Semiconductor |
N-Channel Digital FET |
|
| 5 | FDV303N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 6 | FDV303N |
ON Semiconductor |
N-Channel Digital FET |
|
| 7 | FDV303N |
Kexin |
N-Channel MOSFET |
|
| 8 | FDV304P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|
| 9 | FDV304P |
ON Semiconductor |
P-Channel Digital FET |
|
| 10 | FDV304P-F169 |
ON Semiconductor |
P-Channel Digital FET |
|
Desde 2024. D4U Semiconductor.
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