Part Number | FDG6306P |
Distributor | Stock | Price | Buy |
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Part Number | FDG6306P |
Manufacturer | ON Semiconductor |
Title | P-Channel MOSFET |
Description | This P−Channel 2.5 V specified MOSFET is a rugged gate version of onsemi’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features • −0.6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.5 V ♦ RDS(ON) = 630 mW @ VGS. |
Features |
• −0.6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.5 V ♦ RDS(ON) = 630 mW @ VGS = −2.5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant Applications • Battery Management • Load Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter. |
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