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| Distributor | Stock | Price | Buy |
|---|
FDG6303N |
| Part Number | FDG6303N |
| Manufacturer | ON Semiconductor |
| Title | Dual N-Channel Digital FET |
| Description | These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage appl. |
| Features |
25 V, 0.50 A Continuous, 1.5 A Peak RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.60 W @ VGS = 2.7 V Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V) Gate−Source Zener for ESD Ruggedness (>6 kV Human Body Model) Compact Industry Standard SC70−6 Surface Mount Package These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATIN. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6301N |
Fairchild Semiconductor |
Dual N-Channel/ Digital FET |
|
| 2 | FDG6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDG6301N-F085 |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDG6302P |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET |
|
| 5 | FDG6304P |
ON Semiconductor |
Dual P-Channel Digital FET |
|
| 6 | FDG6304P |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET |
|
| 7 | FDG6306P |
ON Semiconductor |
P-Channel MOSFET |
|
| 8 | FDG6306P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 9 | FDG6308P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 10 | FDG6313N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
Desde 2024. D4U Semiconductor.
|