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FDD6606 30V N-Channel PowerTrench MOSFET

FDD6606

FDD6606
FDD6606 FDD6606
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Part Number FDD6606
Manufacturer Advanced Analogic Technologies
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V • Low gate charge • Fas.
Features
• 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS(ON) Applications
• DC/DC converter
• Motor Drives D G S D G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings 30 ± 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V A W 75 100 71 3.8 1.6
  –55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Stor.
Datasheet Datasheet FDD6606 Data Sheet
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FDD6606

Fairchild Semiconductor
FDD6606
Part Number FDD6606
Manufacturer Fairchild Semiconductor
Title 30V N-Channel PowerTrench MOSFET
Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications • DC/DC converter • Motor Driv.
Features
• 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for S.


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