FDD6606 |
Part Number | FDD6606 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for... |
Features |
• 75 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 75 100 71 3.8 1.6 –55 to +175 Thermal Characteristics R... |
Document |
FDD6606 Data Sheet
PDF 137.21KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDD6606 |
Advanced Analogic Technologies |
30V N-Channel PowerTrench MOSFET | |
2 | FDD6612A |
Fairchild Semiconductor |
30V N-Channel MOSFET | |
3 | FDD6630A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
4 | FDD6630A |
On Semiconductor |
N-Channel MOSFET | |
5 | FDD6632 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDD6635 |
Fairchild Semiconductor |
35V N-CHANNEL MOSFET | |
7 | FDD6637 |
Fairchild Semiconductor |
35V P-Channel PowerTrench MOSFET | |
8 | FDD6637_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
9 | FDD6644 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET | |
10 | FDD6670A |
Fairchild Semiconductor |
N-Channel MOSFET |