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| Part Number | FDC608PZ |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDC608PZ |
| Manufacturer | ON Semiconductor |
| Title | P-Channel MOSFET |
| Description | This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load . |
| Features |
• –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • SuperSOT TM –6 Package: Small Footprint (72% Smaller than Standard SO –8) Low Profile (1 mm Thick) • These Devices are Pb−Free and Halide Free ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Ra. |
similar datasheet
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|---|---|---|---|---|
| 1 | FDC608PZ-F171 |
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| 2 | FDC6000NZ |
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| 3 | FDC6020C |
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| 4 | FDC602P |
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| 5 | FDC6036P |
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| 6 | FDC604P |
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| 7 | FDC604P |
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| 8 | FDC606P |
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| 9 | FDC606P |
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| 10 | FDC610PZ |
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Desde 2024. D4U Semiconductor.
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