Busque con el número de pieza junto con el fabricante o la descripción
FDC608PZ |
Click to view a larger image
| Part Number | FDC608PZ |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for... |
| Features |
• –5.8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4.5 V RDS(ON) = 43 mW @ VGS = –2.5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • SuperSOT TM –6 Package: Small Footprint (72% Smaller than Standard SO –8) Low Profile (1 mm Thick) • These Devices are Pb−Free and Halide Free ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Gate Voltage –20 V VGSS Gate−Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –5.8 A – Pulsed –20 PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.... |
| Document |
 FDC608PZ Data Sheet
PDF 328.41KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC608PZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDC608PZ-F171 |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDC6000NZ |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 4 | FDC6020C |
Fairchild Semiconductor |
Complementary PowerTrench MOSFET |
|
| 5 | FDC602P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 6 | FDC6036P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |
|
Desde 2024. D4U Semiconductor.
|