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EMBA2N10AS |
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| Part Number | EMBA2N10AS |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5V 150mΩ ID @TC=25℃ 17A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Volta. |
| Features | 2.5 75 UNIT °C / W 2019/10/2 p.1 EMBA2N10AS ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS = 70V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 8A VGS = 4.5V, ID = 5A VDS. |
| Datasheet |
 EMBA2N10AS Data Sheet
PDF 423.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMBA2N10A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMBA2A06HS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMBA2A10VS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMBA0A10G |
Excelliance MOS |
MOSFET |
|
| 5 | EMBA0N10A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMBA0N10CS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | EMBA0N10F |
Excelliance MOS |
MOSFET |
|
| 8 | EMBA0N10G |
Excelliance MOS |
MOSFET |
|
| 9 | EMBA0N10S |
Excelliance MOS |
MOSFET |
|
| 10 | EMBA1N10A |
Excelliance MOS |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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