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EMBA0A10G |
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| Part Number | EMBA0A10G |
| Manufacturer | Excelliance MOS |
| Description | Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 100mΩ ID 3.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain C. |
| Features | . |
| Datasheet |
 EMBA0A10G Data Sheet
PDF 190.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMBA0N10A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | EMBA0N10CS |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMBA0N10F |
Excelliance MOS |
MOSFET |
|
| 4 | EMBA0N10G |
Excelliance MOS |
MOSFET |
|
| 5 | EMBA0N10S |
Excelliance MOS |
MOSFET |
|
| 6 | EMBA1N10A |
Excelliance MOS |
MOSFET |
|
| 7 | EMBA1N10Q |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 8 | EMBA2A06HS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | EMBA2A10VS |
Excelliance MOS |
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 10 | EMBA2N10A |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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