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EMB09N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB09N03V

Excelliance MOS
EMB09N03V
Part Number EMB09N03V
Manufacturer Excelliance MOS
Title
Description N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free L...
Features r. 4Guarantee by Engineering test 2020/3/2 A.2 LIMITS ±20 44 12 44 127 28 39.2 19.6 83.3 33.3 2.3 0.9 -55 to 150 MAXIMUM 1.5 55 UNIT V A mJ W W ℃ UNIT °C / W P.1 EMB09N03V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Sou...

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EMB09N03VAT

Excelliance MOS
EMB09N03VAT
Part Number EMB09N03VAT
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description EMB09N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 10A G UIS.
Features W 2015/7/23 p.1 EMB09N03VAT ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain.

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EMB09N03HR

Excelliance MOS
EMB09N03HR
Part Number EMB09N03HR
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tes.
Features 2 pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/3/26 p.1 EMB09N03HR ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Vo.

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EMB09N03H

Excelliance MOS
EMB09N03H
Part Number EMB09N03H
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Teste.
Features pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/3/9 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB09N03H LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Volta.

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EMB09N03G

Excelliance MOS
EMB09N03G
Part Number EMB09N03G
Manufacturer Excelliance MOS
Title N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 14A G UIS, Rg 100% Tes.
Features ad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/7/23 p.1 ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB09N03G LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltag.

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