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EMB09N03V |
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| Part Number | EMB09N03V |
| Manufacturer | Excelliance MOS |
| Description | N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 9.0mΩ 13.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS ... |
| Features |
r. 4Guarantee by Engineering test
2020/3/2 A.2
LIMITS
±20 44 12 44 127 28 39.2 19.6 83.3 33.3 2.3 0.9 -55 to 150
MAXIMUM
1.5 55
UNIT
V A mJ W W ℃
UNIT
°C / W
P.1
EMB09N03V
▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN
STATIC
Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4
On-State Drain Current1 Drain-Source On-State Resistance1,4
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250uA
30
VDS = VGS, ID = 250uA
1.2
VDS = 0V, VGS... |
| Document |
 EMB09N03V Data Sheet
PDF 446.02KB |
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Desde 2024. D4U Semiconductor.
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