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DSEI12-10A Fast Recovery Epitaxial Diode

DSEI12-10A

DSEI12-10A
DSEI12-10A DSEI12-10A
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Part Number DSEI12-10A
Manufacturer IXYS
Description FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-10A 3 1 DSEI12-10A VRRM = 1000 V I FAV = 12 A t rr = 45 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rate.
Features / Advantages:
● Planar passivated chips
● Low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications:
● Antiparallel diode for high frequency switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power supplies (SMPS)
● Uninterruptible power supplies (UPS) Package: TO-220
● I.
Datasheet Datasheet DSEI12-10A Data Sheet
PDF 124.54KB
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DSEI12-10A

INCHANGE
DSEI12-10A
Part Number DSEI12-10A
Manufacturer INCHANGE
Title Fast Recovery Diode
Description Fast Recovery Diode DSEI12-10A FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low power loss, high efficiency ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL.
Features
·With TO-220 packaging
·Metal silicon junction, majority carrier conduction
·Low power loss, high efficiency
·Guardring for overvoltage protection
·High surge capability
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching power supply
·High frequency inverters
·Reverse battery protection
·Polarity protection applications ABSOLUTE MAXIMUM RAT.


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