| Description | FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI12-12A 3 1 DSEI12-12A VRRM = 1200 V I FAV = 12 A t rr = 50 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-va... |
| Features |
/ Advantages:
● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for hig... |
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IXYS |
Fast Recovery Epitaxial Diode |
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IXYS |
Fast Recovery Epitaxial Diode |
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INCHANGE |
Fast Recovery Diode |
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Inchange |
Ultrafast Rectifier |
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IXYS Corporation |
Fast Recovery Epitaxial Diode |
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IXYS |
Fast Recovery Epitaxial Diode |
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ETC |
Fast Recovery Epitaxial Diode |
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IXYS Corporation |
Fast Recovery Epitaxial Diode |
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IXYS Corporation |
Fast Recovery Epitaxial Diode |
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IXYS Corporation |
Fast Recovery Epitaxial Diode |
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