| Description | Formosa MS DB3 DIAC Features www.DataSheet4U.com 1. 2. VBO: 32V Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fl uores... |
| Features | www.DataSheet4U.com 1. 2. VBO: 32V Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fl uorescent lamp ballasts. Absolute Maximum Ratings (Limiting values) Parameter Repetitive peak on-state current (tp=20µ s F=120 Hz) Oper... |
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STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
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Semtech Corporation |
Silicon Bidirectional DIAC |
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Leshan Radio Company |
Bi-directional trigger diodes |
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ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
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STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
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ETC |
HF to 2000 MHz Class AB Common Source |
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ETC |
HF to 2000 MHz Class AB Common Source |
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ETC |
HF to 2000 MHz Class AB Common Source |
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ETC |
HF to 2000 MHz Class AB Common Source |
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ETC |
HF to 2000 MHz Class AB Common Source |
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