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DB3 |
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| Part Number | DB3 |
| Manufacturer | Dc Components |
| Description | DC COMPONENTS CO., LTD. R DB3 THRU DB4 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS (DIACS) FEATURES * Glass passivalted three-layer for triggering thyristors. ... |
| Features |
* Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming, universal-motor speed control and heat controls.
DO-35
MECHANICAL DATA
* Case: Glass sealed case * Lead: MIL-STD-202E, Method 208 guaranteed * Mounting position: Any * Weight: 0.15 gram
25.0MIN 0.52Ø
4.2MAX 2.0MAX
25.0MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate curr... |
| Document |
 DB3 Data Sheet
PDF 167.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|
| 6 | DB-54003-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 7 | DB-54003L-175 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 8 | DB-54003L-175A |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 9 | DB-54003L-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 10 | DB-54003L-512 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
Desde 2024. D4U Semiconductor.
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