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DB3 |
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| Part Number | DB3 |
| Manufacturer | Diotec Semiconductor |
| Description | DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max. Triggerimpuls Glass case Glasgehäuse Weight app... |
| Features |
uchspannug Foldback voltage – Spannungs-Rücksprung )I = IBO to/auf IF = 10 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft dV/dt = 10V/:s RthA 1 ) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 420 01.10.2002 DB 3, DB 4 Typical characteristic of a DIAC – Typische DIAC-Kennlinie Test circuit for a thyristor trigger – Meßschaltung für Thyristor-Zündschaltung 01.10.2002 421 ... |
| Document |
 DB3 Data Sheet
PDF 251.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|
| 6 | DB-54003-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 7 | DB-54003L-175 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 8 | DB-54003L-175A |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 9 | DB-54003L-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 10 | DB-54003L-512 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
Desde 2024. D4U Semiconductor.
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