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| Part Number | D858 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | D858 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emit. |
| Features | Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; VBE= 0 VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V hFE-2 DC Current Gain Switching Times IC= 3A; VCE= 4V ton Turn-On Time toff Turn-Off Time IC= 6A; IB1= -IB2= 0.6A MIN TYP. MAX UNIT 60 V 1.5 V 1.6 V 700 μA 400 μA 1 mA 40 250 2. |
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| 1 | D850 |
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| 3 | D850N |
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| 4 | D851 |
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| 7 | D857 |
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| 8 | D85C220 |
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| 9 | D85C224 |
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| 10 | D80130 |
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Desde 2024. D4U Semiconductor.
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