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D44H11 NPN POWER TRANSISTORS


D44H11
Part Number D44H11
Distributor Stock Price Buy
RECTRON
D44H11
Part Number D44H11
Manufacturer RECTRON
Title SILICON POWER TRANSISTORS
Description NPN D44H SERIES PNP D45H SERIES 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS FEATURES * ...for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converter and power ampifiers. * Low Collector-Emitter Sat.
Features * ...for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converter and power ampifiers. * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (max.) @8.0A * Fast Switching Speeds * Complementary Pairs Simplifies Designs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless oth.
STMicroelectronics
D44H11
Part Number D44H11
Manufacturer STMicroelectronics
Title Complementary power transistors
Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. . TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking D44H8 D44H8 D44H11 D44H11 D45H8 D45H8 .
Features
■ Low collector-emitter saturation voltage
■ Fast switching speed Applications
■ Power amplifier
■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. . TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking D44H8 D44H8 .
ON Semiconductor
D44H11
Part Number D44H11
Manufacturer ON Semiconductor
Title Complementary Silicon Power Transistors
Description D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and p.
Features
• Low Collector−Emitter Saturation Voltage
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 VCEO Vdc 60 80 Emitter Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Total Power Dissipation @ TC = 25°.
Motorola  Inc
D44H11
Part Number D44H11
Manufacturer Motorola Inc
Title 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector–Em.
Features ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ .
INCHANGE
D44H11
Part Number D44H11
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D45H11 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and sw.
Features /W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor D44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Col.
BLUE ROCKET ELECTRONICS
D44H11
Part Number D44H11
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon NPN transistor
Description TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features , 。 Low collector-emitter saturation voltage, fast switching speed. / Applications 。 General purpose switching, general purpose amplifier. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:.
Features , 。 Low collector-emitter saturation voltage, fast switching speed. / Applications 。 General purpose switching, general purpose amplifier. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 D44H11 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to.
Multicomp
D44H11
Part Number D44H11
Manufacturer Multicomp
Title High Power Bipolar Transistor
Description D44H11, D45H11 High Power Bipolar Transistors Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1 MHz; series, shunt and switching regulators; low and high frequency inverters/converters and.
Features
• Very low collector saturation voltage
• Excellent linearity
• Fast switching
• PNP values are negative, observe proper polarity TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous - peak Base current Tota.
Savantic
D44H11
Part Number D44H11
Manufacturer Savantic
Title Silicon NPN Power Transistors
Description ·With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum.
Features RISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector capacitance CONDITIONS IC=10mA IB=0, IC=8A; IB=0.4A IC=8A ;IB=0.8A VCE=80V; VBE=0 VEB=5V; IC=0 IC=2A ; VCE=1V IC=4A ; VCE=1V IC=0..
TAITRON
D44H11
Part Number D44H11
Manufacturer TAITRON
Title NPN Power Transistor
Description VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current Continuous ICM Collector Current Peak (NOTE 1) Total Power Dissipation at TC=25°C PD Total Power Dissipation at TA=25°C RθJC Thermal Resistance from Junction to Case RθJA TL TJ, TSTG Thermal Resistance from Junc.
Features
• Application for Switching Regulators, Converters and Power Amplifiers
• Very low collector saturation voltage
• RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Power Transistor (NPN) D44H11 TO-220 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description VCEO Collector-Emitter.

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