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| Part Number | D44H10 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | D44H10 |
| Manufacturer | RECTRON |
| Title | SILICON POWER TRANSISTORS |
| Description | NPN D44H SERIES PNP D45H SERIES 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS FEATURES * ...for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converter and power ampifiers. * Low Collector-Emitter Sat. |
| Features | * ...for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converter and power ampifiers. * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (max.) @8.0A * Fast Switching Speeds * Complementary Pairs Simplifies Designs MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless oth. |
| Part Number | D44H10 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Power Transistors |
| Description | www.DataSheet4U.com D44H Series (NPN), D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as. |
| Features |
http://onsemi.com
• Low Collector−Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Collector Current − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25°C @ TA = 25°C Operating and Storage Junction Temperature Ran. |
| Part Number | D44H10 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D45H10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switchin. |
| Features | D44H10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A ;IB= 0.8 A VCE=Rated VCEO; VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 1V MIN TYP MAX UNIT 1 V 1.5 V 10 . |
| Part Number | D44H10 |
| Manufacturer | Multicomp |
| Title | Bipolar Transistor |
| Description | Plastic NPN TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/converters and ma. |
| Features |
• Very low collector saturation voltage • Excellent linearity • Fast switching NPN Emitter 3 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC IB PD Rating 80 80 5 1. |
| Part Number | D44H10 |
| Manufacturer | Motorola Inc |
| Title | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by D44H/D Complementary Silicon Power Transistors . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector–Em. |
| Features | ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ . |
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