Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | D2015UK |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | D2015UK |
| Manufacturer | TT |
| Title | RF Silicon Mosfet |
| Description | Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction . |
| Features |
• Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 13dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) . |
similar datasheet
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|---|---|---|---|---|
| 1 | D2010UK |
Seme LAB |
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| 2 | D2011UK |
Seme LAB |
METAL GATE RF SILICON FET |
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| 3 | D2012 |
STMicroelectronics |
NPN Silicon Power Transistor |
|
| 4 | D2012 |
Wuxi Youda Electronics |
Si NPN Transistor |
|
| 5 | D2012 |
Toshiba Semiconductor |
2SD2012 |
|
| 6 | D2012UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 7 | D2013UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 8 | D2014UK |
Seme LAB |
RF SILICON FET |
|
| 9 | D2014UK |
TT |
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|
| 10 | D2016 |
Allegro |
2SD2016 |
|
Desde 2024. D4U Semiconductor.
|